Light emitting device

ABSTRACT

A light emitting device includes a metal layer, a light emitting structure, an electrode disposed on a first upper portion of a second conductive type semiconductor layer, a current spreading portion disposed on a second upper portion of the second conductive type semiconductor layer, an adhesive layer disposed under a first conductive type semiconductor layer, an insulating layer disposed between the electrode and the adhesive layer, a passivation layer disposed on a side surface of the light emitting structure and on a at least one upper surface of the light emitting structure, and a reflective layer disposed between the metal layer and the first conductive type semiconductor layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of copending U.S. application Ser.No. 14/179,420, filed on Feb. 12, 2014, which is a Continuation of U.S.application Ser. No. 12/943,628, filed on Nov. 10, 2010 (now U.S. Pat.No. 8,653,547, Issued on Feb. 18, 2014), which claims priority under 35U.S.C. § 119(a) to Application No. 10-2010-0021289, filed in TheRepublic of Korea on Mar. 10, 2010, all of which are hereby expresslyincorporated by reference into the present application.

BACKGROUND

Embodiments relate to a light emitting device and a light emittingdevice package.

A light emitting diode (LED) is a kind of a semiconductor device forconverting electric energy into light. The LED has advantages such aslow power consumption, a semi-permanent life cycle, a fast responsetime, safety, and environment friendly compared to the related art lightsource such as a fluorescent lamp and an incandescent bulb. Many studiesare being in progress in order to replace the related art light sourcewith an LED. Also, the LED is being increasingly used according to thetrend as light sources of a lighting device such as a variety of lampsand streetlights, a lighting unit of a liquid crystal display device,and a scoreboard in indoor and outdoor places.

SUMMARY

Embodiments provide a light emitting device having a new structure and alight emitting device package.

Embodiments also provide a light emitting device having improved lightemitting efficiency.

Embodiments also provide a light emitting device having improved lightextraction efficiency.

Embodiments also provide a light emitting device, which emits uniformlight.

In one embodiment, a light emitting device includes: a first electrode;a light emitting structure including a first semiconductor layer, anactive layer, and a second semiconductor layer on the first electrode; asecond electrode on the light emitting structure; and a reflectivemember on at least lateral surface of the second electrode.

In another embodiment, a light emitting device includes: a firstelectrode; an adhesive layer on the first electrode; a reflective layeron the adhesive layer; an ohmic contact layer on the reflective layer; achannel layer on the adhesive layer disposed on a lateral surface of theohmic contact layer; a light emitting structure including a firstsemiconductor layer on the channel layer and the ohmic contact layer, anactive layer on the first semiconductor layer, and a secondsemiconductor layer on the active layer; a second electrode on the lightemitting structure, the second electrode having an inclined and unevensurface at least lateral surface thereof; a reflective member on the atleast lateral surface of the second electrode, the reflective memberhaving a shape corresponding to that of the lateral surface of thesecond electrode; and a passivation layer extending from a top surfaceof the channel layer to a lateral surface of the light emittingstructure.

In further another embodiment, a light emitting device package includes:a body; at least one lead electrode on the body; and a light emittingdevice electrically connected to the lead electrode, wherein the lightemitting device includes: a first electrode; a light emitting structureincluding a first semiconductor layer, an active layer, and a secondsemiconductor layer on the first electrode; a second electrode on thelight emitting structure; and a reflective member on at least lateralsurface of the second electrode.

The details of one or more embodiments are set forth in the accompanyingdrawings and the description below. Other features will be apparent fromthe description and drawings, and from the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a side sectional view of a light emitting device according toa first embodiment.

FIG. 2 is a plan view illustrating the light emitting device of FIG. 1.

FIG. 3 is an enlarged view illustrating various formation structures ofa second electrode and a reflective member in the light emitting deviceaccording to the first embodiment.

FIGS. 4 to 14 are views illustrating a process of manufacturing thelight emitting device according to the first embodiment.

FIG. 15 is a side sectional view of a light emitting device according toa second embodiment.

FIG. 16 is a plan view illustrating the light emitting device of FIG.15.

FIG. 17 is a side sectional view of a light emitting device according toa third embodiment.

FIG. 18 is a side sectional view of a light emitting device according toa fourth embodiment.

FIG. 19 is a sectional view of a light emitting device package includinga light emitting device according to an embodiment.

FIG. 20 is an exploded perspective view of a display device according toam embodiment.

FIG. 21 is a view of a display device according to an embodiment.

FIG. 22 is a perspective view of a lighting device according to anembodiment.

DETAILED DESCRIPTION OF THE EMBODIMENTS

In the descriptions of embodiments, it will be understood that when alayer (or film), a region, a pattern, or a structure is referred to asbeing ‘on’ a substrate, a layer (or film), a region, a pad, or patterns,it can be directly on another layer or substrate, or intervening layersmay also be present. Further, it will be understood that when a layer isreferred to as being ‘under’ another layer, it can be directly underanother layer, and one or more intervening layers may also be present.Further, the reference about ‘on’ and ‘under’ each layer will be made onthe basis of drawings.

Hereinafter, embodiments will be described with reference toaccompanying drawings. In the drawings, the thickness or size of eachlayer is exaggerated, omitted, or schematically illustrated forconvenience in description and clarity. Also, the size of each elementdoes not entirely reflect an actual size.

FIG. 1 is a side sectional view of a light emitting device according toa first embodiment, and FIG. 2 is a plan view illustrating the lightemitting device of FIG. 1.

Referring to FIGS. 1 and 2, a light emitting device 100 according to afirst embodiment may include a first electrode 175, an adhesive layer170 on the first electrode 175, a reflective layer 160 on the adhesivelayer 170, an ohmic contact layer 150 on the reflective layer 160, achannel layer 140 around a top surface of the adhesive layer 170, alight emitting structure 135 disposed on the ohmic contract layer 150and the channel layer 140 to generate light, a second electrode 115 onthe light emitting structure 135, and a reflective member 190 disposedon at least one side of the second electrode 115. The light emittingstructure 135 may include a first conductive type semiconductor layer130, an active layer 120, and a second conductive type semiconductorlayer 110.

The first electrode 175 may support a plurality of layers thereon aswell as serve as an electrode. The first electrode 175 together with thesecond electrode 115 may supply power to the light emitting structure135.

For example, the first electrode 175 may include at least one selectedfrom the group consisting of Ti, Ni, Pt, Au, W, Cu, Mo, Cu-M, andcarrier wafers (e.g., Si, Ge, GaAs, ZnO, SiC, and SiGe).

The first electrode 175 may have a thickness changed according to adesign of the light emitting device 100. For example, the firstelectrode 175 may have a thickness of about 30 μm to about 500 μm.

The first electrode 175 may be plated and/or deposited below the lightemitting structure 135 or may adhere to light emitting structure 135 ina sheet form, but is not limited thereto.

The adhesive layer 170 may be disposed on the first electrode 175. Theadhesive layer 170 may be a bonding layer and disposed below the channellayer 140. The adhesive layer 170 has exposed lateral surfaces. Theadhesive layer 170 may contact the reflective layer 160, ends of theohmic contact layer 150, and the channel layer 140 to serve as a mediumfor enhancing an adhesive force between the layers, e.g., between thechannel layer 140, the ohmic contact layer 150, and the reflective layer160 and the first electrode 175.

The adhesive layer 170 may be formed of a barrier metal or a bondingmetal. For example, the adhesive layer 170 may include at least oneselected from the group consisting of Ti, Au, Sn, Ni, Cr, Ga, In, Bi,Cu, Ag, and Ta.

The reflective layer 160 may be disposed on the adhesive layer 170. Thereflective layer 160 may reflect light incident from the light emittingstructure 135 to improve light extraction efficiency.

For example, the reflective layer 160 may include at least one selectedfrom the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au,and Hf or an alloy thereof, but is not limited thereto. Also, thereflective layer 160 may have a multi-layered structure, which is formedby using the foregoing metals together with transparent conductivematerials such as In—ZnO (IZO), Ga—ZnO (GZO), Al—ZnO (AZO), Al—Ga—ZnO(AGZO), In—Ga—ZnO (IGZO), indium zinc tin oxide (IZTO), indium aluminumzinc oxide (IAZO), indium gallium tin oxide (IGTO), and aluminum tinoxide (ATO). That is, for example, the reflective layer 160 may have amulti-layered structure such as IZO/Ni, AZO/Ag, IZO/Ag/Ni, or AZO/Ag/Ni.

The ohmic contact layer 150 may be disposed on the reflective layer 160.The ohmic contact layer 150 may contact the first conductive typesemiconductor layer 130 to smoothly supply power to the light emittingstructure 135.

Particularly, the ohmic contact layer 150 may be formed of one selectedfrom the transparent conductive materials and the foregoing metals. Forexample, the ohmic contact layer may have a single- or multi-layeredstructure, which is formed by using at least one selected from the groupconsisting of indium tin oxide (ITO), indium zinc oxide (IZO), indiumzinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium galliumzinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide(AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx,RuOx/ITO, Ni, Ag, Ni/IrOx/Au, and Ni/IrOx/Au/ITO.

The ohmic contact layer 150 may have an end contacting the adhesivelayer 170. The ohmic contact layer 150 may contact the entire region ofthe first conductive type semiconductor layer 130 except a region of thefirst conductive type semiconductor layer 130 overlapping with thechannel layer 140. As described above, since the ohmic contact layer 150contacts the first conductive type semiconductor layer 130 over as widearea as possible, current may be uniformly supplied to the active layer120 through the entire region of the first conductive type semiconductorlayer 130 contacting the ohmic contact layer 150. Thus, light emittingefficiency may be significantly improved.

A current blocking layer (CBL) 145 may be disposed on the ohmic contactlayer 150 to contact the first conductive type semiconductor layer 130.At least portion of the CBL 145 may vertically overlap with the secondelectrode 115. The CBL 145 may block the current supplied into the firstconductive type semiconductor layer 130 through the ohmic contact layer150. Thus, the supply of the current supplied into the first conductivetype semiconductor layer 130 may be blocked at and around the CBL 145.That is, the CBL 145 may maximally prevent the current fromconcentrately flowing along the shortest path between the firstelectrode 175 and the second electrode 115. As a result, the currentflows into a region between the ohmic contact layer 150 and the firstconductive type semiconductor layer 130 except the CBL 145. Thus, sincethe current uniformly flows into the entire region of the firstconductive type semiconductor layer 145, the light emitting efficiencymay be significantly improved.

Although it maximally prevents the current from flowing along theshortest path between the first electrode 175 and the second electrode115 by the CBL 145, the current flowing through the circumference of theCBL 145 flows into the shortest path between the first electrode 175 andthe second electrode 115 in the first conductive type semiconductorlayer 130 contacting the CBL 145. Thus, the current having the same orsimilar distribution flows into the shortest path between the firstelectrode 175 and the second electrode 115 and the region of the firstconductive type semiconductor layer 145 except the shortest path.

The CBL 145 may be formed of a material having conductivity orinsulativity less than that of the ohmic contact layer 150 or amaterial, which short-circuit contacts the first conductive typesemiconductor layer 130. The CBL 145 may include at least one selectedfrom the group consisting of ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO,ZnO, SiO₂, SiO_(x), SiO_(x)N_(y), Si₃N₄, Al₂O₃, TiO_(x), Ti, Al, and Cr.

The CBL 145 may be disposed between the ohmic contact layer 150 and thefirst conductive type semiconductor layer 130 or between the reflectivelayer 160 and the ohmic contact layer 150, but is not limited thereto.

Also, the CBL 146 may be disposed inside a groove defined in the ohmiccontact layer 150, may protrude from the ohmic contact layer 150, or maybe disposed inside a hole passing through top and bottom surfaces of theohmic contact layer 150, but is not limited thereto.

The channel layer 140 may be disposed on a circumference region of a topsurface of the adhesive layer 170. That is, the channel layer 140 may bedisposed on a circumference region between the light emitting structure135 and the adhesive layer 170.

The channel layer 140 may be formed of a material having insulativity ora material having conductivity less than that of the light emittingstructure 135. For example, the channel layer 140 may be formed of atleast one selected from a group of consisting of SiO₂, Si_(x)O_(y),Si₃N₄, Si_(x)N_(y), SiO_(x)N_(y), Al₂O₃, TiO₂. In this case, it mayprevent the light emitting structure 135 and the first electrode 175from being electrically short-circuited therebetween. Thus, reliabilityof the light emitting device 100 may be improved.

Alternatively, the channel layer 140 may be formed of a metal materialhaving a superior adhesive force, for example, at least one selectedfrom the group consisting of Ti, Ni, Pt, Pd, Rh, Ir, and W. In thiscase, the channel layer 140 may enhance an adhesive force between thelight emitting structure 135 and the adhesive layer 170 to improve thereliability of the light emitting device 100. Also, since the channellayer 140 is not broken or broken pieces of the channel layer 140 arenot generated in a chip separation process such as a laser scribingprocess in which a plurality of chips is divided into individual chipunits and a laser lift off (LLO) process in which a substrate isremoved, the reliability of the light emitting device 100 may beimproved. Also, in case where the channel layer 140 ohmic-contacts thefirst conductive type semiconductor layer 130, since current may flowthrough the channel layer 140, light may be generated in the activelayer 120 vertically overlapping with the channel layer 140. Thus, thelight emitting efficiency of the light emitting device 100 may befurther improved. For example, when the first conductive typesemiconductor layer 130 is a p-type semiconductor layer, the channellayer 140 may be formed of a metal such Ti, Ni, and W, which form anohmic-contact with respect to the p-type semiconductor, but is notlimited thereto.

The light emitting structure 135 may be disposed on the ohmic contactlayer 150 and the channel layer 140.

The light emitting structure 135 has lateral surfaces vertically orinclinedly formed by an isolation etching process in which the pluralityof chips is divided into individual chip units. Also, a portion of a topsurface of the channel layer 140 may be exposed.

The light emitting structure 135 may be formed of a plurality of groupIII-V compound semiconductor materials.

The light emitting structure 135 may include the first conductive typesemiconductor layer 130, the active layer 120 on the first conductivetype semiconductor layer 130, and the second conductive typesemiconductor layer 110 on the active layer 120.

The first conductive type semiconductor layer 130 may be disposed on aportion of a region of the channel layer 140, the ohmic contact layer150, and the CBL 145. The first conductive type semiconductor layer 130may be a p-type semiconductor layer, which is doped with a p-typedopant. The p-type semiconductor layer may be formed of at least one ofgroup III-V compound semiconductor materials, for example, at least oneselected from the group consisting of GaN, AlN, AlGaN, InGaN, InN,InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. The p-type dopantmay be one of Mg, Zn, Ga, Sr, and Ba. The first conductive typesemiconductor layer 130 may have a single- or multi-layered structure,but is not limited thereto.

The first conductive type semiconductor layer 130 may supply a pluralityof carriers to the active layer 120.

The active layer 120 may be disposed on the first conductive typesemiconductor layer 130. The active layer 120 may have at least one of asingle quantum well structure, a multi quantum well (MQW) structure, aquantum wire structure, and a quantum dot structure, but is not limitedthereto.

The active layer 120 may be formed at a cycle of a well layer and abarrier layer by using group III-V compound semiconductor materials.GaN, InGaN, and AlGaN may be used as component semiconductor materialsfor forming the active layer 120. Thus, the active layer 120 may beformed at a cycle of an InGaN well layer/GaN barrier layer, an InGaNwell layer/AlGaN barrier layer, or an InGaN well layer/InGaN barrierlayer, but is not limited thereto.

The active layer 120 may recombine a plurality of holes supplied fromthe first conductive type semiconductor layer 130 with a plurality ofelectrons supplied from the second conductive type semiconductor layer110 to generate light having a wavelength corresponding to that of aband gap depending on a semiconductor material of the active layer 120.

Although not shown, a conductive clad layer may be disposed above and/orbelow the active layer 120. The conductive clad layer may be formed ofan AlGaN-based semiconductor. For example, a p-type clad layer, which isdoped with a p-type dopant may be disposed between the first conductivetype semiconductor layer 130 and the active layer 120. Also, an n-typeclad layer, which is doped with an n-type dopant may be disposed betweenthe active layer 120 and the second conductive type semiconductor layer110.

The conductive clad layer may serve as a stopper by which the pluralityof holes and electrons supplied from the active layer 120 are nottransferred into the first and second conductive type semiconductorlayers 130 and 110. Thus, the holes and electrons supplied from theactive layer 120 may be further recombined with each other by theconductive clad layer to improve the light emitting efficiency of thelight emitting device 100.

The active layer 120 may be disposed on the second conductive typesemiconductor layer 110. The second conductive type semiconductor layer110 may be an n-type semiconductor layer, which is doped with the n-typedopant. The second conductive type semiconductor layer 110 may be formedof at least one of group III-V compound semiconductor materials, forexample, at least one selected from the group consisting of GaN, AlN,AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, andAlGaInP. The n-type dopant may be one of Si, Ge, Sn, Se, and Te. Thesecond conductive type semiconductor layer 110 may have a single- ormulti-layered structure, but is not limited thereto.

A roughness or unevenness 112 may be disposed on the second conductivetype semiconductor layer 110 to improve the light emitting efficiency.The roughness or unevenness 112 may have a random pattern shape formedby a wet etch process or a periodic pattern shape similar to a photoniccrystal structure formed by a patterning process, but is not limitedthereto.

The roughness or unevenness 112 may periodically have a concave shapeand a convex shape. Each of the concave shape and the convex shape mayhave a rounded surface or both inclined surfaces, which are met at anapex thereof.

An n-type semiconductor layer may be disposed below the first conductivetype semiconductor layer 130. Since the first conductive typesemiconductor layer 130 is the p-type semiconductor layer and the secondconductive type semiconductor layer 110 is the n-type semiconductorlayer, the light emitting structure may have at least one of an N-Pjunction structure, a P-N junction structure, an N-P-N junctionstructure, and a P-N-P junction structure.

The second electrode 115 may be disposed on a top surface of the lightemitting structure 135. The second electrode 115 may include a currentspreading pattern 116 b, which spreads current to uniformly supply thecurrent into an electrode pad region 116 a to which a wire is bonded andthe entire region of the light emitting structure 135 by being branchedinto at least one or more sides from the electrode pad region 116 a.

The electrode pad region 116 a may have a square shape, a circularshape, an oval shape, or a polygonal shape, but is not limited thereto.

The second electrode 115 may have a single- or multi-layered structureincluding at least one selected from the group consisting of Au, Ti, Ni,Cu, Al, Cr, Ag, and Pt. Also, the second electrode 115 may have athickness h of about 1 μm to about 10 μm, particularly, about 2 μm toabout 5 μm.

Examples of the multi-layered structure of the second electrode 115 mayinclude an ohmic layer formed of a metal such as Cr to ohmic-contact thelight emitting structure 130 in a first layer that is the lowest layer,a reflective layer formed of a metal such as Al or Ag and having a highreflectance property in a second layer disposed on the first layer, afirst diffusion barrier layer formed of a metal such as Ni forpreventing interlayer diffusion in a third layer disposed on the secondlayer, a conductive layer formed of a metal such as Cu and having highconductivity in a fourth layer disposed on the third layer, a seconddiffusion barrier layer formed of a metal such as Ni for preventinginterlayer diffusion in a fifth layer disposed on the fourth layer, andan adhesive layer 170 formed of a metal such as Au or Ti having a highadhesive force to easily bond a wire, but are not limited thereto.

Also, the electrode pad region 116 a and the current spreading pattern116 b may have the same stacked structure or stacked structuresdifferent from each other. For example, since the current spreadingpattern 116 b does not require the adhesive layer for wire-bonding, theadhesive layer may not be provided. Also, the current spreading pattern116 b may be formed of a material having transmittance and conductivity,e.g., including at least one selected from the group consisting of ITO,IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, and ZnO.

When the roughness or unevenness 112 is disposed on the top surface ofthe light emitting structure 135, a roughness or unevenness having ashape equal or similar to that of the roughness or unevenness 112 may benaturally disposed on a top surface of the second electrode 115 by theroughness or unevenness 112. The roughness or unevenness of the secondelectrode 115 may allow the reflective member 190 (that will bedescribed later) to be firmly coupled to the second electrode 115.

The reflective member 190 may be disposed on at least one lateralsurface of the second electrode 115.

Since the lateral surface of the second electrode 115 has a verticalsurface, a lateral surface of the reflective member 190 disposed on thelateral surface of the second electrode 115 may also have a verticalsurface equal or similar to that of the second electrode 115.

The reflective member 190 may minimize a phenomenon in which lightextracted through the top surface of the light emitting structure 135 isabsorbed by the lateral surface of the second electrode 115.Specifically, since the second electrode 115 has a relatively thickerthickness of about 1 μm to about 10 μm, particularly, about 2 μm toabout 5 μm, an amount of the light absorbed into the lateral surface ofthe second electrode 115 in the light extracted through the top surfaceof the light emitting structure 135 can in no way be negligible in anaspect of the light extraction efficiency. Thus, since the reflectivemember 190 that may reflect the entire light from at least lateralsurface of the second electrode 115 is disposed, the light extractionefficiency of the light emitting device 100 may be significantlyimproved.

The reflective member 190 may have a thickness of about 1 μm to about 10μm according to its manufacturing process. When the reflective member190 has a thickness of less than about 10 μm, the thickness of thereflective member 190 becomes much thinner to reduce the reflectanceproperty. Thus, the light may be absorbed into the second electrode 115through the reflective member 190 as ever. When the reflective member190 has a thickness of greater than about 10 μm, the thickness of thereflective member 190 becomes much thicker to reduce a light extractionregion of the light emitting structure 135. Thus, the light extractionefficiency may be reduced. For example, the reflective member 190 may beformed of at least one or two or more alloys of Ag, Ni, Al, Rh, Pd, Ir,Ru, Mg, Zn, Pt, Au, and Hf.

FIG. 3 is an enlarged view illustrating various formation structures ofthe second electrode and the reflective member in the light emittingdevice according to the first embodiment.

Referring to FIG. 3A, the reflective member 190 may be disposed on theentire region of the lateral surface and a circumference region of thetop surface of the second electrode 115, particularly, the electrode padregion 116 a. Also, the reflective member 190 may extend to contact atop surface of the second conductive type semiconductor layer 110. Theroughness or unevenness 112 equal or similar to the roughness orunevenness 112 disposed on the top surface of the second electrode 115may be transferred onto the top surface of the reflective member 190 bythe roughness or unevenness 112 disposed on the top surface of thesecond electrode 115, but is not limited thereto.

Referring to FIG. 3B, the reflective member 190 may be disposed on theentire region of the lateral surface and a circumference region of thetop surface of the second electrode 115, particularly, the electrode padregion 116 a. Also, the reflective member 190 may extend to contact thetop surface of the second conductive type semiconductor layer 110. Anadhesive layer 195 may be disposed between the reflective member 190 andthe second electrode 115, particularly, the electrode pad region 116 ato improve an adhesive force therebetween. The adhesive layer 195 may beformed of a metal material having a superior adhesive force such as Ni,Pt, or Ti.

Referring to FIG. 3C, the reflective member 190 may be disposed on aportion of the lateral surface and the circumference region of the topsurface of the second electrode 115, particularly, the electrode padregion 116 a. Also, the reflective member 190 may not contact the topsurface of the second conductive type semiconductor layer 110. That isto say, the reflective member 190 may extend from the circumferenceregion of the top surface of the electrode pad region 116 a to theportion of the lateral surface of the second electrode 115. The portionof the lateral surface of the electrode pad region 116 a may be spacedfrom the top surface of the second conductive type semiconductor layer110. The formation structure of the reflective member 190 may resultfrom a mask disposed on the second conductive type semiconductor layer110 in the process of forming the reflective member 190.

The reflective member 190 may be disposed to expose a portion of the topsurface of the electrode pad region 116 a. That is to say, the portionof the top surface of the electrode pad region 116 a may not be coveredby the reflective member 190. That is, the reflective member may not bedisposed in a region in which the wire is bonded on the electrode padregion 116 a.

Referring again to FIGS. 1 and 2, a passivation layer 180 may be formedon at least lateral surface of the light emitting structure 135.Particularly, the passivation layer 180 may have one end formed on thecircumference region of the top surface of the second conductive typesemiconductor layer 110 and the other end by way via or passing throughthe lateral surface of the light emitting structure 135 and formed on atop surface of the channel layer 140, but is not limited thereto. Thatis to say, the passivation layer 180 may extend from the top surface ofthe channel layer 140 to the circumference region of the top surface ofthe second conductive type semiconductor layer 110 via the lateralsurfaces of the first conductive type semiconductor layer 130, theactive layer 120, and the second conductive type semiconductor layer110.

The passivation layer 180 may prevent electrical short circuit fromoccurring between the light emitting structure 135 and a conductivemember such as an external electrode. For example, the passivation layer180 may be formed of a material having insulativity such as SiO₂,SiO_(x), SiO_(x)N_(y), Si₃N₄, TiO₂, or Al₂O₃, but is not limitedthereto.

Hereinafter, a method of manufacturing a light emitting device accordingto an embodiment will be described in detail. However, explanationsduplicated with the foregoing explanations will be omitted or simplydescribed.

FIGS. 4 to 14 are views illustrating a process of manufacturing thelight emitting device according to the first embodiment.

Referring to FIG. 4, a light emitting structure 135 may be formed on asubstrate 101.

For example, the substrate 101 may include at least one selected fromthe group consisting of sapphire (Al₂O₃), SiC, GaAs, GaN, ZnO, Si, GaP,InP, and Ge, but is not limited thereto.

A second conductive type semiconductor layer 110, an active layer 120,and a first conductive type semiconductor layer 130 may be sequentiallygrown on the substrate 101 to form the light emitting structure 135.

For example, the light emitting structure 135 may be formed using atleast one of a metal organic chemical vapor deposition (MOCVD) process,a chemical vapor deposition (CVD) process, a plasma-enhanced chemicalvapor deposition (PECVD) process, a molecular beam epitaxy (MBE)process, and a hydride vapor phase epitaxy (HVPE) process, but is notlimited thereto.

A buffer layer (not shown) or an undoped semiconductor layer (not shown)may be formed between the light emitting structure 135 and the substrate101 to reduce a lattice constant difference therebetween.

The buffer layer may include at least one selected from the groupconsisting of InAlGaN, GaN, AlGaN, InGaN, AlInN, AlN, or InN, but is notlimited thereto.

Referring to FIG. 5, a channel layer 140 may be formed around a chipboundary region on the light emitting structure 135, particularly, thefirst conductive type semiconductor layer 130, i.e., a boundary regionbetween a first chip region T1 and a second chip region T2. The firstchip region T1 and the second chip region T2 may be cut later by ascribing process to manufacture unit light emitting devices. Thus, eachof the chip regions T1 and T2 may be defined as a region for obtaining aunit light emitting device.

The channel layer 140 may be formed around the boundary region betweenthe first chip region T1 and the second chip region T2 using a maskpattern. Since the drawing is two-dimensionally illustrated, FIG. 5illustrates a structure in which the channel layer 140 is formed aroundany one chip region and the entire boundary region between all chipregions contacting the chip region. Thus, when viewed from an upperside, the channel layer 140 may have a ring shape, a loop shape, or aframe shape. The channel layer 140 may be formed using variousdeposition processes such as a sputtering process, an E-beam depositionprocess, and a plasma enhanced chemical vapor deposition (PECVD)process.

The channel layer 140 may be formed of a material having insulativitysuch as SiO₂, Si_(x)O_(y), Si₃N₄, Si_(x)N_(y), SiO_(x)N_(y), Al₂O₃, orTiO₂, or a metal material having a superior adhesive force such as Ti,Ni, Pt, Pd, Rh, Ir, or W. Thus, the channel 140 may prevent electricalshort circuit from occurring between the light emitting structure 135and the first electrode 175 or enhance the adhesive force between thelight emitting structure 135 and an adhesive layer 170 to improvereliability of a light emitting device 100.

Referring to FIG. 6, a current blocking layer (CBL) 145 may be formed onthe first conductive type semiconductor layer 130. The CBL 145 may beformed using a mask pattern. The CBL 145 may be formed on the firstconductive type semiconductor layer 130 in which at least portionthereof vertically overlaps with a second electrode 115 that will beformed by a post-process.

The CBL 145 may be formed of a material having conductivity orinsulativity less than that of the ohmic contact layer 150 or amaterial, which short-circuit contacts the first conductive typesemiconductor layer 130. The CBL 145 may include at least one selectedfrom the group consisting of ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO,ZnO, SiO₂, SiO_(x), SiO_(x)N_(y), Si₃N₄, Al₂O₃, TiO_(x), Ti, Al, and Cr.

Referring to FIGS. 7 and 8, an ohmic contact layer 150 may be formed ontop surfaces of the first conductive type semiconductor layer 130 andthe CBL 145 and portions of lateral and top surfaces of the channellayer 140. A reflective layer 160 may be formed on the ohmic contactlayer 150.

The ohmic contact layer 150 may be formed of one selected from thetransparent conductive materials and the foregoing metals. For example,the ohmic contact layer may have a single- or multi-layered structure,which is formed by using at least one selected from the group consistingof indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tinoxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zincoxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide(AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx,RuOx/ITO, Ni, Ag, Ni/IrOx/Au, and Ni/IrOx/Au/ITO.

For example, the reflective layer 160 may include at least one selectedfrom the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au,and Hf or an alloy thereof, but is not limited thereto. Also, thereflective layer 160 may have a multi-layered structure, which is formedby using the foregoing metals together with transparent conductivematerials such as In—ZnO (IZO), Ga—ZnO (GZO), Al—ZnO (AZO), Al—Ga—ZnO(AGZO), In—Ga—ZnO (IGZO), indium zinc tin oxide (IZTO), indium aluminumzinc oxide (IAZO), indium gallium tin oxide (IGTO), or aluminum tinoxide (ATO). That is, for example, the reflective layer 160 may have amulti-layered structure such as IZO/Ni, AZO/Ag, IZO/Ag/Ni, or AZO/Ag/Ni.

For example, each of the ohmic contact layer 150 and the reflectivelayer 160 may be formed using any one of a sputtering process, an E-beamdeposition process, and a plasma enhanced chemical vapor deposition(PECVD) process.

Referring to FIG. 9, the adhesive layer 170 may be formed on thereflective layer 160 and the channel layer 140, and the first electrode175 may be formed on the adhesive layer 170.

The adhesive layer 170 may be formed of a barrier metal or a bondingmetal. For example, the adhesive layer 170 may include at least oneselected from the group consisting of Ti, Au, Sn, Ni, Cr, Ga, In, Bi,Cu, Ag, and Ta.

For example, the first electrode 175 may include at least one selectedfrom the group consisting of Ti, Ni, Pt, Au, W, Cu, Mo, Cu-M, andcarrier wafers (e.g., Si, Ge, GaAs, ZnO, SiC, and SiGe).

The first electrode 175 may be formed using a plating process or adeposition process, but is not limited thereto.

A separate sheet may be prepared to adhere to the adhesive layer 170using a bonding process, thereby forming the first electrode 175.

Referring to FIG. 11, the substrate 101 may be turned upside down(180°), and then, the substrate 101 may be removed.

The substrate 101 may be removed by at least one of a laser lift off(LLO) method, a chemical lift off (CLO) method, and a physical polishingmethod.

According to the LLO method, a laser is concentrately irradiated onto aninterface between the substrate 101 and the second conductive typesemiconductor layer 110 to separate the substrate 101 from the secondconductive type semiconductor layer 110.

According to the LLO method, the substrate 101 is removed so that thesecond conductive type semiconductor layer 110 is exposed using a wetetch process.

According to the physical polishing method, the substrate 101 isphysically polished to sequentially remove the substrate 101 from a topsurface thereof so that the second conductive type semiconductor layer110 is exposed.

After the substrate 101 is removed, a cleaning process may be furtherperformed to remove a residual of the substrate 101 remaining on the topsurface of the second conductive type semiconductor layer 110. Thecleaning process may include an ashing process, which uses a plasmasurface treatment or oxygen or nitrogen gas.

Referring to FIG. 11, an isolation etching process may be performedalong a boundary region between first and second chip regions T1 and T2to divide a unit chip region including the light emitting structure 135.The channel layer 140 in the boundary region between the first andsecond chip regions T1 and T2 may be exposed by the isolation etchingprocess.

For example, the isolation etching process may be performed by a dryetch process such as an inductively coupled plasma (ICP) process.

Referring to FIG. 12, a passivation layer 180 may be formed on at leastlateral surface of the light emitting structure 135 and the channellayer 140 in the boundary region between the first and second chipregions T1 and T2. That is to say, the passivation layer 180 may contactthe top surface of the channel layer 140 in the boundary region betweenthe first and second chip regions T1 and T2. Also, the passivation layer180 may extend up to the circumference region of the top surface of thesecond conductive type semiconductor layer 110 by way via or passingthrough the lateral surfaces of the first conductive type semiconductorlayer 130, the active layer 120, and the second conductive typesemiconductor layer 110.

The passivation layer 180 may prevent electrical short circuit fromoccurring between the light emitting structure 135 and a conductivemember such as an external electrode. For example, the passivation layer180 may be formed of a material having insulativity such as SiO₂,SiO_(x), SiO_(x)N_(y), Si₃N₄, TiO₂, or Al₂O₃, but is not limitedthereto.

The passivation layer 180 may be formed by a deposition process such asan E-beam deposition process, a PECVD process, or a sputtering process.

A roughness or unevenness 112 may be formed on the top surface of thesecond conductive type semiconductor layer 110 exposed by thepassivation layer 180 to improve light extraction efficiency.

A dry or wet etch process may be performed using the passivation layer180 as a mask to form the roughness or unevenness 112. Any roughness orunevenness is not formed on the second conductive type semiconductorlayer 110 below the passivation layer 180 by the passivation layer 180.

Although a process of forming the roughness or unevenness on the secondconductive type semiconductor layer 110 after the passivation layer 180is formed in FIG. 12, the roughness or unevenness may be formed on thesecond conductive type semiconductor layer 110 before the passivationlayer 180 is formed. In this case, the roughness or unevenness may beformed on the entire lateral surfaces of the second conductive typesemiconductor layer 110, the active layer 120, and the first conductivetype semiconductor layer 130 as well as the top surface of the secondconductive type semiconductor layer 110.

Embodiments are not limited to a given order of forming the passivationlayer 180 and the roughness or unevenness 112 formed on the secondconductive type semiconductor layer 110.

A second electrode may be formed on the second conductive typesemiconductor layer 110 including the roughness or unevenness 112.

The second electrode 115 may include an electrode pad region 116 a towhich a wire is bonded and a current spreading pattern 116 b, whichspreads current to uniformly supply the current into the entire regionof the light emitting structure 135 by being branched into at least oneor more sides from the electrode pad region 116 a.

The electrode pad region 116 a may have a square shape, a circularshape, an oval shape, or a polygonal shape, but is not limited thereto.

The second electrode 115 may have a single- or multi-layered structureincluding at least one selected from the group consisting of Au, Ti, Ni,Cu, Al, Cr, Ag, and Pt.

The second electrode 115 may be formed using a plating process or adeposition process.

Referring to FIG. 13, a reflective member 190 may be formed on at leastlateral surface of the second electrode 115.

The reflective member 190 may be formed on the entire region of thelateral surface and the circumference region of the top surface of thesecond electrode 115, particularly, the electrode pad region 116 a.

For example, the reflective member 190 may be formed of at least one ortwo or more alloys of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, andHf.

The reflective member 190 may be formed by the deposition process suchas the E-beam deposition process, the PECVD process, or the sputteringprocess or may be formed by the plating process.

The reflective member 190 may be formed after a mask is formed on thelight emitting structure 135. In this case, it may prevent the lightemitting structure 135 from being damaged by the process ofmanufacturing the reflective member 190.

Also, in case where the adhesive layer 195 is formed between thereflective member 190 and the second electrode 115 (refer to FIG. 3B),the adhesive layer 195 may be formed on at least one lateral surface ofthe second electrode 115 before the reflective member 190 is formed.

Referring to FIG. 14, a chip separation process may be performed to cutthe boundary region between the first and second chip regions T1 and T2.As a result, since a plurality of chips is divided into individual chipunits, the light emitting device 100 according to an embodiment may bemanufactured.

For example, the chip separation process may include a breaking processin which a physical force using a blade is applied to separate thechips, a laser scribing process in which a laser is irradiated onto aboundary between the chips to separate the chips, and an etch processincluding a wet or dry etch process, but is not limited thereto.

FIG. 15 is a side sectional view of a light emitting device according toa second embodiment, and FIG. 16 is a plan view illustrating the lightemitting device of FIG. 15.

A second embodiment is equal or similar to the first embodiment exceptthat a reflective member 190 is disposed on at least lateral surface ofan electrode pad region 116 a of a second electrode 115 as well as onthe entire surface of a current spreading pattern 116 b except an undersurface of the current spreading pattern 116 b of the second electrode115.

Thus, equivalent parts of the second embodiment are given the same termor reference number as in the first embodiment.

In addition, the same contents as those of the first embodiment will notbe described in detail in the second embodiment. The contents, which arenot described in the second embodiment, may be easily understood fromthe first embodiment.

Referring to FIGS. 15 and 16, in a light emitting device 100A accordingto the second embodiment, the reflective member 190 may be disposed onat least lateral surface of the electrode pad region 116 a of the secondelectrode 115 as well as on the entire surface of the current spreadingpattern 116 b except the under surface of the current spreading pattern116 b of the second electrode 115.

That is to say, the reflective member 190 may cover a top surface andboth lateral surfaces of the current spreading pattern 116 b.

According to the second embodiment, the reflective member 190 may befurther disposed on the entire surface of the current spreading pattern116 b except the under surface of the current spreading pattern 116 b.Thus, since light extracted through a second conductive typesemiconductor layer 110 is totally reflected by the reflective member190 disposed on the at least lateral surface of the current spreadingpattern 116 b, light losses may be minimized when compared to that ofthe first embodiment and light extraction efficiency may be improved.

FIG. 17 is a side sectional view of a light emitting device according toa third embodiment.

A third embodiment is equal or similar to the first embodiment exceptthat a second electrode 115 has an inclined lateral surface, and also areflective member 190 disposed on the lateral surface of the secondelectrode 115 is inclinedly disposed on the lateral surface of thesecond electrode 115.

Thus, equivalent parts of the third embodiment are given the same termor reference number as in the first embodiment.

In addition, the same contents as those of the first embodiment will notbe described in detail in the third embodiment. The contents, which arenot described in the third embodiment, may be easily understood from thefirst embodiment.

Referring to FIG. 17, in a light emitting device 100B according to thethird embodiment, the second electrode 115 may have an inclined lateralsurface. That is, the second electrode 115 may have an under surfacehaving a width greater than that of a top surface thereof.

Similarly, since the second electrode 115 has the inclined lateralsurface, the reflective member 190 disposed on the lateral surface ofthe second electrode 115 may also have an inclined surface equal orsimilar to that of the second electrode 115.

In addition, the reflective member 190 may be disposed around acircumference region of the top surface of the second electrode 115,like the first embodiment. Also, the reflective member 190 may contact asecond conductive type semiconductor layer 110 or may be spaced from thesecond conductive type semiconductor layer 110.

Thus, since the reflective member 190 has the inclined lateral surface,light extracted through the second conductive type semiconductor layer110 may be reflected by the inclined surface of the reflective member190 to improve light extraction efficiency.

FIG. 18 is a side sectional view of a light emitting device according toa fourth embodiment.

A fourth embodiment is equal or similar to the third embodiment exceptthat a roughness or unevenness is disposed on each of lateral surfacesof a second electrode 115 and a reflective member 190.

Thus, equivalent parts of the fourth embodiment are given the same termor reference number as in the third embodiment.

In addition, the same contents as those of the first and thirdembodiments will not be described in detail in the fourth embodiment.The contents, which are not described in the fourth embodiment, may beeasily understood from the first and third embodiments.

Referring to FIG. 18, in a light emitting device 100C according to thefourth embodiment, the second electrode 115 may have an inclined lateralsurface. Also, the roughness or unevenness may be disposed on each oftop and lateral surfaces of the second electrode 115.

The second electrode 115 may have an under surface having a widthgreater than that of the top surface thereof.

In addition, the second electrode 115 may have the inclined lateralsurface, and also, the roughness or unevenness may be disposed on theinclined lateral surface of the second electrode 115.

Similarly, since the second electrode 115 has the inclined lateralsurface and the roughness or unevenness is disposed on the inclinedlateral surface of the second electrode 115, the reflective member 190disposed on the lateral surface of the second electrode 115 may alsohave a roughness or unevenness equal or similar to that of the secondelectrode 115.

Thus, since the reflective member 190 has the inclined lateral surface,light extracted through a second conductive type semiconductor layer 110may be reflected by the inclined surface of the reflective member 190 toimprove light extraction efficiency. Also, since the roughness orunevenness may be disposed on the lateral surface of the reflectivemember 190, the light extracted through the second conductive typesemiconductor layer 110 may be randomly reflected by the roughness orunevenness of the reflective member 190. As a result, the light mayuniformly proceed in all directions of a light emitting structure 135 toimprove light uniformity.

FIG. 19 is a sectional view of a light emitting device package includinga light emitting device according to an embodiment.

Referring to FIG. 19, a light emitting device package 30 according to anembodiment includes a body part 20, first and second electrode layers 31and 32 disposed on the body part 20, a light emitting device 1 disposedon the body part 20 and electrically connected to the first and secondelectrode layers 31 and 32, and a molding member 40 surrounding thelight emitting device 1 on the body part 20.

The body part 20 may be formed of a silicon material, a synthetic resinmaterial, or a metal material. Also, when viewed from an upper side, thebody part 20 has a cavity 50 therein, and the cavity 50 has an inclinedsurface 53.

The first electrode layer 31 and the second electrode layer 32 may beelectrically separated from each other and pass through the inside ofthe body part 20. That is, each of the first and second electrode layers31 and 32 has one end disposed inside the cavity 50 and the other endattached to an outer surface of the body part 20 and exposed to theoutside.

The first and second electrode layers 31 and 32 may provide power to thelight emitting device 1. Also, the first and second electrode layers 31and 32 may reflect light generated in the light emitting device 1 toimprove light efficiency. In addition, the first and second electrodelayers 31 and 32 may discharge heat generated in the light emittingdevice 1 to the outside.

The light emitting device 1 may be disposed on the body part 20 or thefirst or second electrode layer 31 or 32.

First and second wires 171 and 181 of the light emitting device 1 may beelectrically connected to one of the first and second electrode layers31 and 32, but is not limited thereto.

The molding member 40 may surround the light emitting device 1 toprotect the light emitting device 1. Also, a phosphor may be containedin the molding member 40 to change a wavelength of light emitted fromthe light emitting device 1.

The light emitting device or the light emitting device package accordingto an embodiment may be applied to a light unit. The light unit has astructure in which a plurality of light emitting devices or lightemitting device packages is arrayed. Thus, the light unit may include adisplay device illustrated in FIGS. 20 and 21 and a lighting deviceillustrate in FIG. 22. In addition, the light unit may includeillumination lamps, traffic lights, vehicle headlights, and signs.

FIG. 20 is an exploded perspective view of a display device according toam embodiment.

Referring to FIG. 20, a display unit 1000 may include a light guideplate 1041, a light emitting module 1031 providing light to the lightguide plate 1041, a reflective member 1022 below the light guide plate1041, an optical sheet 1051 above the light guide plate 1041, a displaypanel 1061 above the optical sheet 1051, and a bottom cover 1011receiving the light guide plate 1031, the light emitting module 1031,and the reflective member 1022, but is not limited thereto.

The bottom cover 1011, the reflective member 1022, the light guide plate1041 may be defined as the light unit 1050.

The light guide plate 1041 diffuses light supplied from the lightemitting module 1031 to produce planar light. The light guide plate 1041may be formed of a transparent material. For example, the light guideplate 1041 may be formed of one of an acrylic resin-based material suchas polymethylmethacrylate (PMMA), a polyethylene terephthalate (PET)resin, a poly carbonate (PC) resin, a cyclic olefin copolymer (COC)resin, and a polyethylene naphthalate (PEN) resin.

The light emitting module 1031 is disposed on at least one lateralsurface of the light guide plate 1041 to provide light to the at leastone lateral surface of the light guide plate 1041. Thus, the lightemitting module 1031 may be used as a light source of a display device.

At least one light emitting module 1031 may be disposed on one lateralsurface of the light guide plate 1041 to directly or indirectly providelight. The light emitting module 1031 may include a substrate 1033 andthe light emitting device packages 30 according to the embodiment. Thelight emitting device packages 30 may be arrayed by a predetermineddistance on the substrate 1033. The substrate 1033 may be a printedcircuit board (PCB), but is not limited thereto. Also, the substrate1033 may include a metal core PCB or a flexible PCB, but is not limitedthereto. When the light emitting device packages 30 are mounted on alateral surface of the bottom cover 1011 or on a heatsink plate, thesubstrate 1033 may be removed. Here, a portion of the heatsink plate maycontact a top surface of the bottom cover 1011. Thus, heat generated inthe light emitting device package 30 may be discharged into the bottomcover 1011 via the heatsink plate.

The plurality of light emitting device packages 30 may be mounted toallow a light emitting surface through which light is emitted onto thesubstrate 1033 to be spaced a predetermined distance from the lightguide plate 1041, but is not limited thereto. The light emitting devicepackages 30 may directly or indirectly provide light to a light incidentsurface that is a side of the light guide plate 1041, but is not limitedthereto.

The reflective member 1022 may be disposed below the light guide plate1041. Since the reflective member 1022 reflects light incident onto anunder surface of the light guide plate 1041 to supply the light to thedisplay panel 1061, brightness of the display panel 1061 may beimproved. For example, the reflective member 1022 may be formed of oneof PET, PC, and PVC, but is not limited thereto. The reflective member1022 may be the top surface of the bottom cover 1011, but is not limitedthereto.

The bottom cover 1011 may receive the light guide plate 1041, the lightemitting module 1031, and the reflective member 1022. For this, thebottom cover 1011 may include a receiving part 1012 having a box shapewith an opened upper side, but is not limited thereto. The bottom cover1011 may be coupled to a top cover (not shown), but is not limitedthereto.

The bottom cover 1011 may be formed of a metal material or a resinmaterial. Also, the bottom cover 1011 may be manufactured using a pressmolding process or an extrusion molding process. The bottom cover 1011may be formed of a metal or non-metal material having superior heatconductivity, but is not limited thereto.

For example, the display panel 1061 may be a liquid crystal display(LCD) panel, and include first and second substrates formed of atransparent material and a liquid crystal layer between the first andsecond substrates. A polarizing plate may be attached to at least onesurface of the display panel 1061. The present disclosure is not limitedto the attached structure of the polarizing plate. The display panel1061 transmits or blocks light provided from the light emitting module1031 to display information. The display unit 1000 may be applied tovarious portable terminals, a monitor for a notebook computer, a monitorfor a laptop computer, television, etc.

The optical sheet 1051 is disposed between the display panel 1061 andthe light guide plate 1041 and includes at least one transmission sheet.For example, the optical sheet 1051 may include at least one of adiffusion sheet, a horizontal or vertical prism sheet, a brightnessenhanced sheet, etc. The diffusion sheet diffuses incident light, andthe horizontal or/and vertical prism sheet collects the incident lightinto a display region. In addition, the brightness enhanced sheet reuseslost light to improve the brightness. Also, a protection sheet may bedisposed on the display panel 1061, but is not limited thereto.

Optical members such as the light guide plate 1041 and the optical sheet1051 may be disposed on an optical path of the light emitting module1031, but is not limited thereto.

FIG. 21 is a view of a display device according to an embodiment.

Referring to FIG. 21, a display unit 1100 includes a bottom cover 1152,a substrate 1120 on which the above-described light emitting devicepackages 30 are arrayed, an optical member 1154, and a display panel1155.

The substrate 1120 and the light emitting device package 30 may bedefined as a light emitting module 1060. The bottom cover 1152, the atleast one light emitting module 1060, and the optical member 1154 may bedefined as a lighting unit.

The bottom cover 1152 may include a receiving part 1153, but is notlimited thereto.

The optical member 1154 may include at least one of a lens, a lightguide plate, a diffusion sheet, horizontal and vertical prism sheets,and a bright enhancement sheet. The light guide plate may be formed of aPC material or PMMA material. In this case, the light guide plate may beremoved. The diffusion sheet diffuses incident light, and the horizontaland vertical prism sheets collect the incident light into the displaypanel 1155. The brightness enhanced sheet reuses lost light to improvebrightness.

The optical member 1154 is disposed on the light emitting module 1060 toproduce planar light using the light emitted from the light emittingmodule 1060 or diffuse and collect the light emitted from the lightemitting module 1060.

FIG. 22 is a perspective view of a lighting device according to anembodiment.

Referring to FIG. 22, the lighting unit 1500 may include a case 1510, alight emitting module 1530 in the case 1510, and a connection terminal1520 disposed in the case 1510 to receive an electric power from anexternal power source.

The case 1510 may be preferably formed of a material having good heatshielding characteristics, for example, a metal material or a resinmaterial.

The light emitting module 1530 may include a substrate 1532 and a lightemitting device package 30 mounted on the substrate 1532. The lightemitting device package 30 may be provided in plurality, and theplurality of light emitting device packages 30 may be arrayed in amatrix shape or spaced a predetermined distance from each other.

The substrate 1532 may be an insulator substrate on which a circuitpattern is printed. For example, the substrate may include a generalprinted circuit board (PCB), a metal core PCB, a flexible PCB, a ceramicPCB, FR-4, etc.

Also, the substrate 1532 may be formed of a material to efficientlyreflect light, and a surface thereof may be formed in a color capable ofefficiently reflecting light. For example, the substrate may be a coatedlayer having a white color or a silver color.

The at least one light emitting device packages 30 may be mounted on thesubstrate 1532. Each of the light emitting device packages 30 mayinclude at least one light emitting diode (LED) chip. The LED chip mayinclude a color LED emitting red, green, blue or white light, and a UVLED emitting ultraviolet (UV) rays.

The light emitting module 1530 may have a combination of several lightemitting device packages 30 to obtain desired color and luminance. Forexample, the light emitting module 1530 may have a combination of awhite LED, a red LED, and a green LED to obtain a high color renderingindex (CRI).

The connection terminal 1520 may be electrically connected to the lightemitting module 1530 to supply a power. The connection terminal 1520 maybe screwed and coupled to an external power source in a socket type, butis not limited thereto. For example, the connection terminal 1520 may bemade in a pin type and inserted into an external power source, or may beconnected to the external power source through a wire.

According to the embodiments, in the method of manufacturing the lightemitting device, the first electrode is prepared, and the light emittingstructure including the first semiconductor layer, the active layer, andthe second semiconductor layer are disposed on the first electrode.Also, the second electrode is disposed on the light emitting structure,and the reflective member is disposed on the at least lateral surface ofthe second electrode.

According to the embodiments, since the reflective member is disposed onthe at least lateral surface of the second electrode, the lightextracted through the light emitting structure may be reflected by thereflective member to improve the light extraction efficiency of thelight emitting device.

According to the embodiments, the second electrode includes theelectrode pad region and the current spreading patterns, which arebranched into at least one or more sides from the electrode pad region.Here, since the reflective member is disposed on the at least lateralsurface of the electrode pad region, the light extracted through thelight emitting structure may be reflected by the electrode pad region toimprove the light extraction efficiency of the light emitting device.

According to the embodiments, since the adhesive layer is disposedbetween the second electrode and the reflective member, the reflectivemember may further strongly adhere to the second electrode by theadhesive layer.

According to the embodiments, since the reflective member is disposed onat least lateral surface of each of the current spreading patterns, thelight extracted through the light emitting structure may be reflected bythe electrode pad region as well as the current spreading patterns tosignificantly improve the light extraction efficiency.

According to the embodiments, since the lateral surface of the electrodehas the inclined surface and the unevenness, the light extracted throughthe light emitting structure may be randomly reflected by the unevennessto realize more uniform light.

Any reference in this specification to “one embodiment,” “anembodiment,” “example embodiment,” etc., means that a particularfeature, structure, or characteristic described in connection with theembodiment is included in at least one embodiment of the invention. Theappearances of such phrases in various places in the specification arenot necessarily all referring to the same embodiment. Further, when aparticular feature, structure, or characteristic is described inconnection with any embodiment, it is submitted that it is within thepurview of one skilled in the art to affect such feature, structure, orcharacteristic in connection with other ones of the embodiments.

Although embodiments have been described with reference to a number ofillustrative embodiments thereof, it should be understood that numerousother modifications and embodiments can be devised by those skilled inthe art that will fall within the spirit and scope of the principles ofthis disclosure. More particularly, various variations and modificationsare possible in the component parts and/or arrangements of the subjectcombination arrangement within the scope of the disclosure, the drawingsand the appended claims. In addition to variations and modifications inthe component parts and/or arrangements, alternative uses will also beapparent to those skilled in the art.

What is claimed is:
 1. A light emitting device comprising: a lightemitting structure comprising a first semiconductor layer, an activelayer and a second semiconductor layer; a first conductive member, and asecond conductive member comprising a first portion and a second portiondisposed on the light emitting structure; and a conductive layerdisposed on the first conductive member and the first portion of thesecond conductive member; wherein the conductive layer is directly incontact with an upper surface of the first portion, an upper surface ofthe second portion and an upper surface of the light emitting structure,wherein the first conductive member has a multi-layered structure havinga first layer and a second layer, and wherein the first layer is alowermost layer of the conductive member and the second layer isdirectly in-contact with the first layer which has Ag.
 2. The lightemitting device of claim 1, wherein at least one of the first conductivemember, the first portion and the second portion has an inclinedsurface.
 3. The light emitting device of claim 1, wherein an uppersurface of the conductive layer has a roughness.
 4. The light emittingdevice of claim 3, wherein at least one portion of the upper surface ofthe light emitting structure is exposed from the second conductivemember.
 5. The light emitting device of claim 1, wherein a width of thefirst conductive member is wider than a width of a contact regionbetween the conductive layer and the light emitting structure.
 6. Thelight emitting device of claim 1, wherein the first conductive membercomprises Ti.
 7. The light emitting device of claim 1, wherein the firstportion and the second portion comprise ITO (indium tin oxide).
 8. Thelight emitting device of claim 1, wherein the conductive layer comprisesAl and Ni.
 9. The light emitting device of claim 1, wherein a distancebetween a top surface of the conductive layer and a top surface of thelight emitting structure is longer than a distance between a top surfaceof the first conductive member and the top surface of the light emittingstructure.
 10. A light emitting device comprising: a transparent layer;a light emitting structure on the transparent layer; a first conductivemember, and a second conductive member comprising a first portion and asecond portion disposed on the light emitting structure; a conductivelayer disposed on the first conductive member, and the first portion andthe second portions of the second conductive member; wherein at leastone of the first conductive member, the first portion and the secondportion has an inclined surface, wherein the conductive layer isdirectly contact with an upper surface of the first portion, an uppersurface of the second portion and an upper surface of the light emittingstructure, wherein the first conductive member has a multi-layeredstructure which has a first layer and a second layer, wherein the firstlayer is a lowermost layer of the conductive member and the second layeris directly in-contact with the first layer which has Ag, and whereinthe transparent layer comprises a first sub-layer and a second sub-layeron the first sub-layer.
 11. The light emitting device of claim 10,wherein the first sub-layer comprises Ti and the second sub-layercomprises SiO² and the second sub-layer vertically overlaps with thefirst conductive member.
 12. The light emitting device of claim 10,wherein an upper surface of the second sub-layer is lower than the uppersurface of the light emitting structure.
 13. The light emitting deviceof claim 10, wherein an upper surface of the conductive layer is higherthan an upper surface of the first conductive member, the upper surfaceof the first portion and the upper surface of the second portion. 14.The light emitting device of claim 10, wherein a side surface of thelight emitting structure has an inclined surface.
 15. The light emittingdevice of claim 10, wherein a width of the first conductive member iswider than a width of contact region between the conductive layer andthe light emitting structure.
 16. A light emitting device comprising: afirst electrode comprising one of Au and Ni; a transparent layer; alight emitting structure on the transparent layer; a first conductivemember, and a second conductive member comprising a first portion and asecond portion disposed on the light emitting structure; a conductivelayer disposed on the first conductive member, and the first portion andthe second portion of the second conductive member; wherein at least oneof the first conductive member, the first portion and the second portionhas an inclined surface, wherein the conductive layer is directlycontact with an upper surface of the first portion, an upper surface ofthe second portion and an upper surface of the light emitting structure,wherein the first conductive member has a multi-layered structure whichhas a first layer and a second layer, wherein the first layer is alowermost layer of the conductive member and the second layer isdirectly in-contact with the first layer has Ag, wherein the transparentlayer has a first sub-layer comprising Ti and a second sub-layercomprising SiO₂ on the first sub-layer, wherein the second sub-layervertically overlaps with the first conductive member, wherein an uppersurface of the conductive layer is higher than an upper surface of thefirst conductive member, the first portion and the second portion,wherein the conductive layer is spaced apart from an edge of a topsurface of the light emitting structure, wherein a side surface of thelight emitting structure has an inclined surface, and wherein at leastone portion of the upper surface of the light emitting structure isexposed from the conductive layer.
 17. The light emitting device ofclaim 16, wherein the conductive layer comprises Al and Ni.
 18. Thelight emitting device of claim 16, wherein a distance between a topsurface of the conductive layer and the top surface of the lightemitting structure is longer than a distance between a top surface ofthe first conductive member and the top surface of the light emittingstructure.
 19. The light emitting device of claim 16, wherein the firstportion and the second portion comprise ITO (indium tin oxide).
 20. Thelight emitting device of claim 16, wherein a width of the firstconductive member is wider than a width of contact region between theconductive layer and the light emitting structure.